First Principle Analysis of Os-passivated Armchair Graphene Nanoribbons for Nanoscale Interconnects

Journal article

Vipul Kumar Nishad, A. Nishad, Sourajeet Roy, Brajesh Kumar Kaushik, Rohit Sharma
2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO), 2020

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APA Click to copy
Nishad, V. K., Nishad, A., Roy, S., Kaushik, B. K., & Sharma, R. (2020). First Principle Analysis of Os-passivated Armchair Graphene Nanoribbons for Nanoscale Interconnects. 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO).

Chicago/Turabian Click to copy
Nishad, Vipul Kumar, A. Nishad, Sourajeet Roy, Brajesh Kumar Kaushik, and Rohit Sharma. “First Principle Analysis of Os-Passivated Armchair Graphene Nanoribbons for Nanoscale Interconnects.” 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO) (2020).

MLA Click to copy
Nishad, Vipul Kumar, et al. “First Principle Analysis of Os-Passivated Armchair Graphene Nanoribbons for Nanoscale Interconnects.” 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO), 2020.

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@article{vipul2020a,
  title = {First Principle Analysis of Os-passivated Armchair Graphene Nanoribbons for Nanoscale Interconnects},
  year = {2020},
  journal = {2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO)},
  author = {Nishad, Vipul Kumar and Nishad, A. and Roy, Sourajeet and Kaushik, Brajesh Kumar and Sharma, Rohit}
}

Abstract

In this paper, transport properties of Osmium (Os)-passivated armchair graphene nanoribbons (AGNRs) have been explored for applications in nanoscale interconnects. Os has been used for passivation in place of Hydrogen (H). In general, H-passivation is used to reduce the edge scattering in AGNRs. However, this increases the bandgap of the structure. In our study, it is found that Os-passivation reduces the edge scattering with improvement in metallicity of AGNRs, which makes it suitable for future nanoscale interconnects. We have extracted key parameters, such as transmission spectrum, I-V characteristics, number of conduction channels, Fermi velocity, kinetic inductance and quantum capacitance. We have compared our results with Fe-passivated AGNRs. In case of Os-passivated AGNRs, up to eight conduction channels are seen that result in higher currents of up to 4x as compared to Fe-passivated AGNRs.